guest ::
| Home > Publications database > Nanostrukturierung von epitaktischen CoSi$_{2}$/Si-Heterostrukturen mittels lokaler Oxidation |
| Home > Publications database > Nanostrukturierung von epitaktischen CoSi$_{2}$/Si-Heterostrukturen mittels lokaler Oxidation |
| Book/Report | FZJ-2019-04483 |
1998
Forschungszentrum Jülich, Zentralbibliothek, Verlag
Jülich
Please use a persistent id in citations: http://hdl.handle.net/2128/22622
Report No.: Juel-3579
Abstract: Silicides are the materials of choice for contacts and short interconnects in microelectronic devices. For a new generation of devices the realization of nanostructures is required. The optical lithography techniques encompass their limits. In this thesis it is shown that silicide layers can be patterned by lokal oxidation (LOCOSI). This technique uses standard optical lithography in combination wich the well known masking technique employed for lokal oxidation of silicon (LOCOS) and exploits the oxidation stability of silicide layers. During oxidation of the silicide silicon dioxide grows on top of the silicide. The silicide layer remains its morphology but moves into the silicon substrate. Local oxidation shifts the silicide layer deeper into the substrate only in the oxidized regions generating weak points at the transition regions between the unmasked and masked regions. At a critical silicon dioxide thickness depending on the mechanical stress ileld of the oxidation mask and the thickness of the silicide, the silicide lauer breaks up at diese transition points into two separated regions. In this thesis the patterning process of epitaxial CoSi$_{2}$/Si(111) and CoSi$_{2}$/Si(100) heterostructures is investigated. The influence of the crystal symmetry, the silicide thickness, the design of the oxidation mask and the oxidation conditions is discussed. Under optimized conditions local oxidation produces a gap of only 50 nm between the silicide layers.
|
The record appears in these collections: |
PDF
PDF (PDFA)